phase control thyristor H250TBXX symbol characteristics conditions t j ( 0 c) value unit blocking parameters v rrm repetitive peak reverse voltage 125 200-1800 v v drm repetitive peak off-stage voltage 125 200-1800 v i rrm repetitive peak reverse current v = v rrm 125 50 ma i drm repetitive peak off-state current v = v rrm 125 50 ma conducting parameters i f(av) average on-state current 180 sine, 50h z , t c = 78 0 c 250 a i rms rms on-state current 392 a i tsm surge on-state current 4.60 ka i 2 t i 2 t sine wave, 10ms without reverse voltage 125 106 ka 2 s v t peak on-state voltage drop on-state current = 785a 125 1.75 v v 0 threshold voltage 125 0.92 v r 0 on-state slope resistance 125 0.99 m triggering parameters i gt gate trigger current v d = 5v 25 200 ma v gt gate trigger voltage 25 2.00 v i l latching current v d = 5v 25 600 ma p g ?peak maximum peak gate power pulse width 100 sec 120 w di/dt repetitive rate of rise of current 150 a/ sec v fgm maximum forward gate voltage 12 v i fgm maximum forward gate current 25 a thermal & mechanical parameters r th (j-c) thermal impedance, 180 conduction, sine junction to case 0.12 0 c/w r th (c-hk) thermal impedance case to heatsink 0.04 0 c/w t j maximum permissible junction temperature 125 0 c t stg storage temperature range -40 - 125 0 c f mounting torque 26 nm w weight 320 gms h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 1 of 6
phase control thyristor H250TBXX all dimensions in mm h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 2 of 6
phase control thyristor H250TBXX on state power loss 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 350 400 450 it ( av ) p t(av) - w 60 0 120 180 0 dc maximum permissible case temp 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 it( av ) a t case ( 0 c) 60 0 120 0 180 0 dc h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 3 of 6
phase control thyristor H250TBXX max non repetitive surge current 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 10 time in sec i tsm (a) transient thermal impedance junction to case 0 0.025 0.05 0.075 0.1 0.125 0.15 0.001 0.01 0.1 1 10 time in sec r th(j-c) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 4 of 6
phase control thyristor H250TBXX on state characteristics 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 00.511.522.53 v t (v) i t(av ) a gate trigger characteristics 0.1 1 10 100 0.01 0.1 1 10 100 i g (av) - a v g(v) - v 120w (0.1ms) 25 0 c h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 5 of 6
phase control thyristor H250TBXX ordering information: - h 250 tb xx hirect make thyristor i f(av) = 250a tb ? with a pigtail v rrm = xx * 100 e.g.12 * 100 =1200v hind rectifiers ltd reserves the right to change the specifications without notice. this datasheet specifies technical information for semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. hind rectifiers ltd lake road bhandup (west) mumbai ? 400 078 tel: - +91 22 2596 8027/28/29/31 fax: - +91 22 2596 4114 e-mail: - marketing@hirect.com website: - www.hirect.com june-2008 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 6 of 6
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